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A detailed analysis of the I-V characteristics of a PN junction diode (1N4148) under different temperatures, utilizing Excel for graphical analysis and parameter extraction. This study was conducted as part of the ECE 515: Fundamentals of Semiconductor Devices course at Portland State University.

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Ghonimo/Diode-PN-Junction-Characterization-PSU-ECE515

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Diode-PN-Junction-Characterization-PSU-ECE515

Description

This repository contains an in-depth characterization of the PN junction diode 1N4148, focusing on analyzing its current-voltage (I-V) characteristics at room and elevated temperatures. Conducted for the ECE 515: Fundamentals of Semiconductor Devices course at Portland State University, this project uses Excel for data analysis, offering insights into diode behavior through graphical analysis and theoretical model comparisons.

Data Analysis

Excel was chosen for its interactivity and simplicity in handling the project's data analysis requirements. The analysis involves:

  • Plotting linear and semi-logarithmic I-V characteristics.
  • Fitting the data to the diode equation to extract parameters like the ideality factor and saturation current.
  • Assessing the impact of temperature on diode performance.
  • Comparing experimental data with theoretical predictions.

Repository Structure

  • Collected Data/: Contains raw data files used in the analysis.
  • Analysis Sheets/: Excel files with plotted graphs and fitted models.
  • Report/: Detailed project report including methodology, results, and conclusions.
  • README.md: Provides an overview of the project and instructions for navigating the repository.

Results Overview

The project successfully demonstrates the temperature dependence of the diode's I-V characteristics, revealing significant insights into the diode's operational behavior. Key findings include the extraction of the diode's ideality factor and saturation current, and the observation of shifts in the I-V curve with temperature changes.

Contributing

Contributions to improve the analysis or extend the study are welcome. Please fork the repository, make your changes, and submit a pull request.

Credits

  • Mohamed Ghonim: Project lead and author of the analysis.
  • Prof. Malgorzata Chrzanowska-Jeske: Supervisor and course instructor.

License

This project is shared under the MIT License. See the LICENSE file for more details.

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A detailed analysis of the I-V characteristics of a PN junction diode (1N4148) under different temperatures, utilizing Excel for graphical analysis and parameter extraction. This study was conducted as part of the ECE 515: Fundamentals of Semiconductor Devices course at Portland State University.

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