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MOSFET models show nonphysical gm/ID behavior #381
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related #380 |
@hpretl : Can you please post here the SPICE testbench netlist that was used to generate the plot above so that I can run it on the continuous FET model and confirm that the continuous models have restored sanity to the gm/Id curve? |
@hpretl @RTimothyEdwards Sorry, I don't have the testbench anymore. It's simple, though: Single transistor with source and bulk grounded (or at supply for PMOS). I can recreate the bench tonight in case you're having issues duplicating the plot. Thanks for looking into the model issue! |
FYI - Raw data collected from SKY130 silicon has been released at https://github.com/google/skywater-pdk-sky130-raw-data |
http://www2.hawaii.edu/~whitece6/posts/firstpost/ actually has a testbench + a notebook that reproduce the issue, we should test that the model in #380 actually fixes the glitch. |
@hpretl trying to reproduce the testbench linked in http://www2.hawaii.edu/~whitece6/posts/firstpost/ with
and I'm getting the following error:
Any clues? |
Removing the
seems to workaround the error in #381 (comment) but it doesn't seems that |
@proppy : Use |
Here's a PMOS case (which looks bad; it should look similar in shape to above NMOS example):
|
tried to reproduce the plot in the original submission from @hpretl: #381 (comment) without much success. sky130_fd_pr__nfet_01v8binned
continuous
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@proppy please read my post above. You need to run PMOS. |
tried w/ the pfet as pointed by #381 (comment) and http://www2.hawaii.edu/~whitece6/posts/firstpost/#testing-with-the-pmos and it doesn't seems that it fixes the glitch. sky130_fd_pr__pfet_01v8binned
continuous
|
@proppy Yikes, that is very unfortunate... |
also tried the netlist from #381 (comment) sky130_fd_pr__pfet_01v8_hvtbinned
continuous
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I think this is to be expected. The continuous models are not a complete recharacterization of the process; they are just taking the original data and correcting the coefficients to make sure that properties are continuous across device size (e.g., transistor width and length). I recall that the original "bad behavior" demonstration was a plot of something vs. transistor width that showed a discontinuity at the bin boundary---that should be fixed by the continuous models. What causes the bump in the middle of the gm/Id curve, I don't know, but devices are not binned over voltage so it's not a binning effect. |
@RTimothyEdwards understood, let's continue to discuss the "bad behavior" around bin boundary in #380. We can keep this issue (#381) to investigate the root cause of the bump in the gm/ld curve independently. |
Hi @alecadair, thanks for confirming! |
There is an issue with W/L sizing in those models, please check: |
Expected Behavior
The gm/ID MOSFET sizing methodology is widely used among analog circuit designers. It is known, how a physical, well-behaved MOSFET characteristic should look like.
Actual Behavior
As has been shown in this Slack thread, the currently available SKY130 MOSFET models show a non-physical behavior, which could be a side effect of the model binning.
Proposed Solution
It is proposed to release the continuous MOSFET models to circumvent these issues.
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