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input_file.m
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input_file.m
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% layers structure %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% first column is the conduction band offset in eV
% second column is the length of the layer in nm
% third column is the n doping volumique of that layer in 1e18cm-3
% You have to put a resonable amount of doping! Otherwise, it will diverge
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
InGaAs=0;
AlInAs=0.52;
AlInAs2=0.2;
meff = 0.042;
Epsi = 10;
M=[
AlInAs 5 0
AlInAs 1 2
AlInAs 5 0
InGaAs 6 0
AlInAs 5 0
InGaAs 7 0
AlInAs 5 0
AlInAs 1 5
AlInAs 5 0
];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% GaAs=0;
% AlGaAs40=0.36;
% meff = 0.067;
% Epsi = 10;
%
% M=[
% AlGaAs40 5 0
% AlGaAs40 1 5
% AlGaAs40 5 0
% GaAs 8 0
% AlGaAs40 2 0
% GaAs 5 0
% AlGaAs40 5 0
% AlGaAs40 1 5
% AlGaAs40 5 0
% ];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% InGaAs=0;
% GaAs=0.2;
% meff = 0.05;
% Epsi = 10;
%
% M=[
% GaAs 10 0
% GaAs 1 5
% GaAs 5 0
% InGaAs 15 0
% GaAs 5 0
% GaAs 1 5
% GaAs 10 0
% ];
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% GaN = 0;
% AlN = 1.8;
% meff = 0.22;
% Epsi = 10;
% DF = 10; % Electrical field discontinuity [MV/cm]
%
% Lb = 3; % barrier thickness [nm]
% Lw = 1; % well thickness [nm]
% Ls = 0.2; % doping spike thickness [nm] (in order to get the E-field)
%
% Fb = +DF*(Lw+2*Ls)/(Lw+Lb+4*Ls)*1e6*1e2; %[V/m]
% Fw = -DF*(Lb+2*Ls)/(Lw+Lb+4*Ls)*1e6*1e2; %[V/m]
%
% dopS = DF*1e6*1e2*Epsi*Epsi0/e; % charge/m2 MUST BE added on the interface for GaN/AlN for Wurtzite
% dopV = dopS/(Ls*1e-9); % charge/m3
% dopV = dopV*1e-6*1e-18; % charge 1e18cm-3
%
% M=[
% AlN Ls 0
% AlN Lb 0
% AlN Ls 0
%
% GaN Ls -dopV
% GaN Lw 50
% GaN Ls +dopV
%
% AlN Ls 0
% AlN Lb 0
% AlN Ls 0
%
% GaN Ls -dopV
% GaN Lw 0
% GaN Ls +dopV
% ];